DatasheetProduct Attributes
| TYPE | DESCRIPTION |
|---|---|
| Category: | Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar RF Transistors |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Series: | – |
| Packaging: | Tape & Reel Cut Tape (CT) Digi-Reel® |
| Part Status: | Last Time Buy |
| Transistor Type: | NPN |
| Voltage – Collector Emitter Breakdown (Max): | 6V |
| Frequency – Transition: | 11.5GHz |
| Noise Figure (dB Typ @ f): | 1.2dB @ 1GHz |
| Gain: | 12dB |
| Power – Max: | 700mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 30mA, 5V |
| Current – Collector (Ic) (Max): | 100mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | S-Mini |
| Base Product Number: | MT3S111 |
Documents & Media
| Resource Type | Link |
|---|---|
| Datasheets: | MT3S111 |
Environmental & Export Classifications
| Attribute | Description |
|---|---|
| RoHS Status: |
ROHS3 Compliant
|
| Moisture Sensitivity Level (MSL): |
1 (Unlimited)
|
| ECCN: |
EAR99
|
| HTSUS: |
8541.21.0075
|
Additional Resources
| Attribute | Description |
|---|---|
| Other Names: |
MT3S111(TE85LF)DKR
MT3S111(TE85LF)TR MT3S111(TE85LF) MT3S111(TE85LF)CT |
| Standard Package: |
3,000
|
