Product Attributes
TYPE | DESCRIPTION |
---|---|
Category: | Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays, Pre-Biased |
Manufacturer: | Toshiba Semiconductor and Storage |
Series: | – |
Packaging: | Tape & Reel Cut Tape (CT) Digi-Reel® |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP – Pre-Biased (Dual) |
Current – Collector (Ic) (Max): | 100mA |
Voltage – Collector Emitter Breakdown (Max): | 50V |
Resistor – Base (R1): | 10kOhms |
Resistor – Emitter Base (R2): | 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current – Collector Cutoff (Max): | 500nA |
Frequency – Transition: | 250MHz, 200MHz |
Power – Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
Base Product Number: | RN4987 |
Documents & Media
Resource Type | Link |
---|---|
Datasheets: | RN4987FE |
EDA Models: | RN4987FE,LF(CT Models |
Environmental & Export Classifications
Attribute | Description |
---|---|
RoHS Status: |
ROHS3 Compliant
|
Moisture Sensitivity Level (MSL): |
1 (Unlimited)
|
REACH Status: |
REACH Unaffected
|
ECCN: |
EAR99
|
HTSUS: |
8541.21.0095
|
Additional Resources
Attribute | Description |
---|---|
Other Names: |
RN4987FE,LF(CB
RN4987FELF(CBCT-ND RN4987FELF(CTTR RN4987FELF(CBCT RN4987FELF(CBTR-ND RN4987FELF(CBDKR-ND RN4987FE(T5LFT)CT RN4987FE(T5LFT)DKR-ND RN4987FE(T5LFT)CT-ND RN4987FELF(CTCT RN4987FELF(CBDKR RN4987FE(T5LFT)TR-ND RN4987FELF(CBTR RN4987FE(T5LFT)TR RN4987FELF(CTDKR RN4987FE(T5L,F,T) RN4987FE(T5LFT)DKR |
Standard Package: |
4,000
|