DatasheetProduct Attributes
| TYPE | DESCRIPTION |
|---|---|
| Category: | Discrete Semiconductor Products Transistors IGBTs IGBT Modules |
| Manufacturer: | Microchip Technology |
| Series: | POWER MOS 8™ |
| Packaging: | Tube |
| Part Status: | Active |
| IGBT Type: | PT |
| Configuration: | Single |
| Voltage – Collector Emitter Breakdown (Max): | 600 V |
| Current – Collector (Ic) (Max): | 112 A |
| Power – Max: | 356 W |
| Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 62A |
| Current – Collector Cutoff (Max): | 275 µA |
| Input Capacitance (Cies) @ Vce: | 8.01 nF @ 25 V |
| Input: | Standard |
| NTC Thermistor: | No |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | SOT-227-4, miniBLOC |
| Supplier Device Package: | ISOTOP® |
| Base Product Number: | APT60GA60 |
Documents & Media
| Resource Type | Link |
|---|---|
| Datasheets: | APT60GA60JD60 |
| Environmental Information: | |
| PCN Assembly/Origin: | Mult Dev Assembly 10/Jun/2024 |
Environmental & Export Classifications
| Attribute | Description |
|---|---|
| RoHS Status: |
ROHS3 Compliant
|
| Moisture Sensitivity Level (MSL): |
1 (Unlimited)
|
| REACH Status: |
REACH Unaffected
|
| ECCN: |
EAR99
|
| HTSUS: |
8541.29.0095
|
Additional Resources
| Attribute | Description |
|---|---|
| Standard Package: |
10
|
