DatasheetProduct Attributes
| TYPE | DESCRIPTION |
|---|---|
| Category: | Discrete Semiconductor Products Transistors IGBTs IGBT Modules |
| Manufacturer: | Infineon Technologies |
| Series: | – |
| Packaging: | Tray |
| Part Status: | Active |
| IGBT Type: | – |
| Configuration: | Half Bridge |
| Voltage – Collector Emitter Breakdown (Max): | 1200 V |
| Current – Collector (Ic) (Max): | 45 A |
| Power – Max: | 215 W |
| Vce(on) (Max) @ Vge, Ic: | 2.25V @ 15V, 25A |
| Current – Collector Cutoff (Max): | 1 mA |
| Input Capacitance (Cies) @ Vce: | 1.45 nF @ 25 V |
| Input: | Standard |
| NTC Thermistor: | Yes |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | AG-EASY1B |
| Base Product Number: | F3L25R12 |
Documents & Media
| Resource Type | Link |
|---|---|
| Datasheets: | F3L25R12W1T4_B27 |
| Environmental Information: | RoHS Certificate |
| HTML Datasheet: | F3L25R12W1T4_B27 |
| EDA Models: | F3L25R12W1T4B27BOMA1 Models |
Environmental & Export Classifications
| Attribute | Description |
|---|---|
| RoHS Status: |
ROHS3 Compliant
|
| Moisture Sensitivity Level (MSL): |
1 (Unlimited)
|
| REACH Status: |
REACH Unaffected
|
| ECCN: |
EAR99
|
| HTSUS: |
8541.29.0095
|
Additional Resources
| Attribute | Description |
|---|---|
| Other Names: |
F3L25R12W1T4B27BOMA1-ND
448-F3L25R12W1T4B27BOMA1 F3L25R12W1T4_B27 SP001056108 |
| Standard Package: |
24
|
