DatasheetProduct Attributes
| TYPE | DESCRIPTION |
|---|---|
| Category: | Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays, Pre-Biased |
| Manufacturer: | onsemi |
| Series: | – |
| Packaging: | Tape & Reel Cut Tape (CT) Digi-Reel® |
| Part Status: | Active |
| Transistor Type: | 2 NPN – Pre-Biased (Dual) |
| Current – Collector (Ic) (Max): | 100mA |
| Voltage – Collector Emitter Breakdown (Max): | 50V |
| Resistor – Base (R1): | 2.2kOhms |
| Resistor – Emitter Base (R2): | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
| Current – Collector Cutoff (Max): | 500nA |
| Frequency – Transition: | – |
| Power – Max: | 250mW |
| Grade: | – |
| Qualification: | – |
| Mounting Type: | Surface Mount |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package: | SC-88/SC70-6/SOT-363 |
| Base Product Number: | MUN5235 |
Documents & Media
| Resource Type | Link |
|---|---|
| Datasheets: | MUN5235DW1, NSBC123JDXV6, NSBC123JDP6 |
| Environmental Information: | |
| PCN Design/Specification: | Copper Wire 08/Jun/2009 |
| PCN Assembly/Origin: | Mult Dev Assembly 30/Jul/2020 |
| HTML Datasheet: | MUN5235DW1, NSBC123JDXV6, NSBC123JDP6 |
| EDA Models: | MUN5235DW1T1G Models |
Environmental & Export Classifications
| Attribute | Description |
|---|---|
| RoHS Status: |
ROHS3 Compliant
|
| Moisture Sensitivity Level (MSL): |
1 (Unlimited)
|
| REACH Status: |
REACH Unaffected
|
| ECCN: |
EAR99
|
| HTSUS: |
8541.21.0095
|
Additional Resources
| Attribute | Description |
|---|---|
| Other Names: |
MUN5235DW1T1GOSTR
MUN5235DW1T1G-ND MUN5235DW1T1GOSDKR MUN5235DW1T1GOSCT |
| Standard Package: |
3,000
|
